tm h11g1m, h11g2m, h11g3m high voltage photodarlington optocouplers may 2007 ?007 fairchild semiconductor corporation www.fairchildsemi.com h11gxm rev. 1.0.0 h11g1m, h11g2m, h11g3m high voltage photodarlington optocouplers features high bv ceo minimum 100v for h11g1m minimum 80v for h11g2m minimum 55v for h11g3m high sensitivity to low input current (min. 500% ctr at i f = 1ma) low leakage current at elevated temperature (max. 100? at 80?) underwriters laboratory (ul) recognized file # e90700, volume 2 applications cmos logic interface telephone ring detector low input ttl interface power supply isolation replace pulse transformer general description the h11gxm series are photodarlington-type optically coupled optocouplers. these devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an inte- gral base-emitter resistor to optimize elevated tempera- ture characteristics. schematic emitter collector 1 2 3 anode cathode 4 5 6 base n/c
h11g1m, h11g2m, h11g3m high voltage photodarlington optocouplers ?007 fairchild semiconductor corporation www.fairchildsemi.com h11gxm rev. 1.0.0 2 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. symbol parameter value units tot al device t stg storage temperature -55 to +150 ? t opr operating temperature -40 to +100 ? t sol lead solder temperature (wave solder) 260 for 10 sec ? p d t otal device power dissipation @ t a = 25? derate above 25? 260 mw 3.5 mw/? emitter i f f orward input current 60 ma v r reverse input voltage 6.0 v i f (pk) f orward current ?peak (1? pulse, 300pps) 3.0 a p d led power dissipation @ t a = 25? derate above 25? 100 mw 1.8 mw/? detector v ceo collector-emitter voltage v h11g1m 100 h11g2m 80 h11g3m 55 p d led power dissipation @ t a = 25? derate above 25? 200 mw 2.67 mw/?
h11g1m, h11g2m, h11g3m high voltage photodarlington optocouplers ?007 fairchild semiconductor corporation www.fairchildsemi.com h11gxm rev. 1.0.0 3 electrical characteristics (t a = 25? unless otherwise specified.) individual component characteristics t ransfer characteristics isolation characteristics *all typical values at t a = 25? symbol characteristic test conditions device min. typ.* max. unit emitter v f f orward voltage i f = 10ma all 1.3 1.50 v ? v f ? t a f orward voltage t emp. coef cient all -1.8 mv/? bv r reverse breakdown v oltage i r = 10? all 3.0 25 v c j j unction capacitance v f = 0v, f = 1mhz all 50 pf v f = 1v, f = 1mhz 65 i r reverse leakage current v r = 3.0v all 0.001 10 ? detector bv ceo breakdown voltage collector to emitter i c = 1.0ma, i f = 0 h11g1m 100 v h11g2m 80 h11g3m 55 bv cbo collector to base i c = 100? h11g1m 100 v h11g2m 80 h11g3m 55 bv ebo emitter to base all 7 10 v i ceo leakage current collector to emitter v ce = 80v, i f = 0 h11g1m 100 na v ce = 60v, i f = 0 h11g2m v ce = 30v, i f = 0 h11g3m v ce = 80v, i f = 0, t a = 80? h11g1m 100 ? v ce = 60v, i f = 0, t a = 80? h11g2m symbol characteristics test conditions device min. typ.* max. units emitter ctr current transfer ratio, collector to emitter i f = 10ma, v ce = 1v h11g1m/2m 100 (1000) ma (%) i f = 1ma, v ce = 5v h11g1m/2m 5 (500) h11g3m 2 (200) v ce(sat) saturation voltage i f = 16ma, i c = 50ma h11g1m/2m 0.85 1.0 v i f = 1ma, i c = 1ma h11g1m/2m 0.75 1.0 i f = 20ma, i c = 50ma h11g3m 0.85 1.2 switching times t on tu r n-on time r l = 100 ? , i f = 10ma, v ce = 5v, f 30hz, pulse width 300? all 5 ? t off tu r n-off time all 100 ? symbol characteristic test conditions device min. typ.* max. units v iso isolation voltage f = 60hz, t = 1 sec. all 7500 v ac peak r iso isolation resistance v i-o = 500 vdc all 10 11 ? c iso isolation capacitance f = 1mhz all 0.2 pf
h11g1m, h11g2m, h11g3m high voltage photodarlington optocouplers ?007 fairchild semiconductor corporation www.fairchildsemi.com h11gxm rev. 1.0.0 4 typical performance curves fig. 1 output current vs. input current i f - led input current(ma) 0.1 1 10 i c - normalized output current 0.001 0.01 0.1 1 10 normalized to: v ce = 5v i f = 1ma i c - normalized output current fig. 2 normalized output current vs. temperature t a - ambient temperature (?c) -60 -40 -20 0 20 40 60 80 100 120 0.01 0.1 1 10 100 i f = 50ma i f = 5ma i f = 1ma i f = 0.5ma i c - normalized output current v ce - collector - emitter voltage (v) 110 0.01 0.1 1 10 100 i f = 50ma i f = 10ma i f = 2ma i f = 1ma i f = 0.5ma normalized to: v ce = 5 v i f = 1 ma t a = 25?c normalized to: v ce = 5v i f = 1ma t a = 25?c fig. 3 output current vs. collector - emitter voltage i ceo - dark current (na) t a - ambient temperature (?c) 01020304 05060708090100 0.01 0.1 1 10 100 1000 fig. 4 collector-emitter dark current vs. ambient temperature v ce = 30v v ce = 10v v ce = 80v fig. 5 input current vs. total switching speed (typical values) t on + t off - total switching speed (normalized) 0.1 1 10 i f - forward current (ma) 0.1 1 10 normalized to: v cc = 5 v i f = 10 ma r l = 100 ? r l = 100 ? r l = 1k ? r l = 10 ?
h11g1m, h11g2m, h11g3m high voltage photodarlington optocouplers ?007 fairchild semiconductor corporation www.fairchildsemi.com h11gxm rev. 1.0.0 5 package dimensions through hole surface mount 0.4" lead spacing recommended pad layout for surface mount leadform note: all dimensions are in inches (millimeters). 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.035 (0.88) 0.006 (0.16) 0.012 (0.30) 0.008 (0.20) 0.200 (5.08) 0.115 (2.93) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) 0.070 ( 1.78 ) 0.060 ( 1.52 ) 0.030 ( 0.76 ) 0.100 ( 2.54 ) 0.305 ( 7.75 ) 0.425 ( 10.79 )
h11g1m, h11g2m, h11g3m high voltage photodarlington optocouplers ?007 fairchild semiconductor corporation www.fairchildsemi.com h11gxm rev. 1.0.0 6 ordering information marking information option order entry identi?r (example) description no option h11g1m standard through hole device s h11g1sm surface mount lead bend sr2 H11G1SR2M surface mount; tape and reel t h11g1tm 0.4" lead spacing v h11g1vm vde 0884 tv h11g1tvm vde 0884, 0.4" lead spacing sv h11g1svm vde 0884, surface mount sr2v h11g1sr2vm vde 0884, surface mount, tape and reel h11g1 v x yy q 1 2 6 4 3 5 de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code, e.g., ? 5t wo digit work week ranging from ?1 to ?3 6 assembly package code
h11g1m, h11g2m, h11g3m high voltage photodarlington optocouplers ?007 fairchild semiconductor corporation www.fairchildsemi.com h11gxm rev. 1.0.0 7 carrier tape speci?ations re?w pro?e 4.0 0.1 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 1.5 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 c time (s) 0 60 180 120 270 260 c >245 c = 42 sec time above 183 c = 90 sec 360 1.822 c/sec ramp up rate 33 sec
h11g1m, h11g2m, h11g3m high voltage photodarlington optocouplers ?007 fairchild semiconductor corporation www.fairchildsemi.com h11gxm rev. 1.0.0 8 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex across the board. around the world. activearray bottomless build it now coolfet crossvolt ctl current transfer logic dome e 2 cmos ecospark ensigna fact quiet series fact fast fastr fps frfet globaloptoisolator gto hisec i-lo implieddisconnect intellimax isoplanar microcoupler micropak microwire motion-spm msx msxpro ocx ocxpro optologic optoplanar pacman pdp-spm pop power220 power247 poweredge powersaver power-spm powertrench programmable active droop qfet qs qt optoelectronics quiet series rapidconfigure rapidconnect scalarpump smart start spm stealth superfet supersot -3 supersot -6 supersot -8 syncfet tcm the power franchise tinyboost tinybuck tinylogic tinyopto tinypower tinywire trutranslation serdes uhc unifet vcx wire disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild? worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild? products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems wh ich, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary this datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production first production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i26
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